2SC3930 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
2SC3930 TRANSISTOR (NPN)
SOT-323
FEATURES
z For high-frequency Amplification Complementary to 2SA1532
z Optimum for RF amplification of FM/AM radios
z High transition frequency f_T
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
20
5
30
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
1.BASE
2.EMITTER
3.COLLECTOR
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Common emitter reverse transfer
capacitance
Noise figure
Reverse transfer impedance
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
f_T
Cre
NF
Z_rb
I_C=100μA, I_E=0
I_C= 100μA, I_B=0
I_E= 100μA, I_C=0
V_CB=10V,I_E=0
V_EB=5V,I_C=0
V_CE=10V,I_C=1mA
V_CE=10V,I_E=1mA,
f=200MHZ
V_CB=10V,I_C=1mA,
f=10.7MHZ
V_CB=10V,I_C=1mA, f=5MHz
V_CB=10V,I_C=1mA, f=2MHz
Min Typ
30
20
5
70
150
Max Unit
V
V
V
0.1
μA
0.1
μA
220
MHz
1.5
pF
4
dB
50
Ω
CLASSIFICATION OF hFE₍₁₎
Marking
Range
VB
70-140
VC
110-220
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