2SC3437 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (ULTRA HIGH SPEED SWITCHING, COMPUTER, COUNTER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
2SC3437 TRANSISTOR (NPN)
SOT–23
FEATURES
 High Transition Frequency
 Low Saturation Voltage
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
40
VCEO Collector-Emitter Voltage
15
VEBO Emitter-Base Voltage
5
IC
Collector Current
200
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
150
Tstg
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VEB=5V, IC=0
VCE=1V, IC=10mA
VCE=1V, IC=100mA
IC=20mA, IB=1mA
IC=20mA, IB=1mA
VCE=10V,IC=10mA
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
R
40–80
CHR
O
70–140
CHO
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max Unit
40
V
15
V
5
V
0.1
µA
0.1
µA
40
240
20
0.3
V
1
V
200
MHz
6
pF
Y
120–240
CHY
www.cj-elec.com
1
BA,OJucnt,2014