2SC3415 Datasheet, PDF (1/3 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC3415 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z Low Collector Output Capacitance
z Ideal for Chroma Circuit
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
300
300
5
0.1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
C_ob
f_T
Test conditions
I_C= 50µA,I_E=0
I_C=100µA,I_B=0
I_E=50µA,I_C=0
V_CB=200V,I_E=0
V_EB=4V,I_C=0
V_CE=10V, I_C=10mA
I_C=50mA,I_B=5mA
I_C=50mA,I_B=5mA
V_CB=30V,I_E=0, f=1MHz
VCE=30V,IC=10mA
Min Typ Max Unit
300
V
300
V
5
V
0.5
μA
0.5
μA
39
180
2
V
1.2
V
3
pF
50
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
M
39-82
N
56-120
P
82-180
www.cj-elec.com
1
C,Dec,2015