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| 2SC3330 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92S Plastic-Encapsulate Transistors | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
2SC3330 TRANSISTOR (NPN)
FEATURES
z Large Current Capacity and Wide ASO
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 3
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
60
50
6
200
300
417
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
Test conditions
IC= 10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=40V,IE=0
VEB=5V,IC=0
VCE=6V, IC=1mA
VCE=6V, IC=0.1mA
IC=100mA,IB=10mA
IC=100mA,IB=10mA
VCB=6V,IE=0, f=1MHz
VCE=6V,IC=10mA
Min Typ Max Unit
60
V
50
V
6
V
0.1 μA
0.1 μA
100
800
70
0.3
V
1
V
3
pF
200
MHz
CLASSIFICATION OF hFE(1)
RANK
R
RANGE
100-200
S
140-280
T
200-400
U
280-560
V
400-800
www.cj-elec.com
1
DA,Juln,2,2001164
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