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| 2SC3303 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (HIGH CURRENT SWITCING APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SC3303 TRANSISTOR (NPN)
TO-251-3L
FEATURES
z Low Collector Saturation Voltage
z High Speed Switching Time
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
100
80
7
5
1
125
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
Test conditions
IC=100µA,IE=0
IC=10mA,IB=0
IE=100µA,IC=0
VCB=100V,IE=0
VEB=7V,IC=0
VCE=1V, IC=1A
VCE=1V, IC=3A
IC=3A,IB=150mA
IC=3A,IB=150mA
VCB=10V,IE=0, f=1MHz
VCE=4V,IC=1A,
Min Typ Max Unit
100
V
80
V
7
V
1
μA
1
μA
70
240
40
0.4
V
1.2
V
80
pF
20
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
O
70-140
Y
120-240
www.cj-elec.com
1
D,Nov,2014
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