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| 2SC3138 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
2SC3138 TRANSISTOR (NPN)
FEATURE
z Low current(max.50 mA)
z High voltage(max.200V )
z Telephony and professional communication equipment.
SOT-23-3L
MARKING:
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RÎJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
1. BASE
2. EMITTER
3. COLLECTOR
Value
200
200
5
50
350
357
150
-55ï½+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO = IC=100µA, IE 0
V(BR)C= EO IC=1mA, IB 0
V(BR)EBO = IE=100µA, IC 0
ICBO = VCB=200V, IE 0
IE= BO VEB=5V, IC 0
hFE
VCE(sat)
VBE(sat)
fT
VCE== 3V, IC 10mA
= IC=10mA, IB 1mA
= IC=10mA, IB 1mA
VCE=10V,IC=2 mA,
f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
Min
Typ
Max Unit
200
V
200
V
5
V
0.1
µA
0.1
µA
120
240
0.5
V
1.5
V
50
MHz
4
pF
www.cj-elec.com
1
D,May,2015 D
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