2SC3052-SOT-23 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC3052 TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
2. 4
P_CM:
0.15 W (Tamb=25℃)
1. 3
Collector current
I_CM:
0.2 A
Collector-base voltage
V _{(BR) CBO}:
50 V
Operating and storage junction temperature range
Unit: mm
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V (BR) CBO
IC = 100 µA, IE=0
50
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 100 µA, IB=0
50
V
Emitter-base breakdown voltage
V (BR) EBO
IE= 100 µA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 50 V , IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB= 6V , IC=0
0.1
µA
DC current gain
hFE(1)
hFE(2)
VCE= 6V, IC= 1mA
VCE= 6V, IC= 0.1mA
150
800
50
Collector-emitter saturation voltage
VCE (sat)
IC=100mA, IB= 10mA
0.3
V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
VBE (sat)
IC= 100mA, IB= 10mA
fT
VCE= 6V, IC= 10mA
180
C_ob
VCE=6V, IE=0, f=1MHz
NF
VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ
1
V
MHz
4
pF
15 dB
CLASSIFICATION OF h_FE(1)
Rank
E
Range
150~300
Marking
LE
F
250~500
LF
G
400~800
LG