2SC2999 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – HF Amplifier Applications

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SC2999 TRANSISTOR (NPN)
FEATURES
High f_T and Small C_re
TO-92S
1. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
25
20
3
30
400
125
-40-125
Unit
V
V
V
mA
mW
℃
℃
2. COLLECTOR
3. BASE
12 ₃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer Capacitance
Base-to-Collector Time Constant
Symbol Test conditions
V_(BR)CBO I_C=100μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=10V, I_E=0
I_EBO
V_EB=3V,I_C=0
h_FE
V_CE=6V, I_C=1mA
f_T
V_CE=6V, I_C=4mA
C_re
V_CB=6V, f=1MHz
rbb’c_c V_CE=6V, I_C=1mA,,f=31.9MH_Z
Min Typ M ax U nit
25
V
20
V
3
V
0.1
μA
0.1
μA
40
200
450 750
MHz
0.6
0.9
pF
19
ps
Noise figure
NF
V_CE=6V, I_C=1mA,,f=100MH_Z
2.2
dB
CLASSIFICATION OF h_FE
Rank
Range
C
40-80
D
60-120
E
100-200
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DA,Juln,2,2001164