2SC2983 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (POWER, DIRVER STAGE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SC2983 TRANSISTOR (NPN)
TO-251-3L
FEATURES
z High Transition Frequency
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
160
160
5
1.5
1
125
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
*Pulse test
Symbol
V_(BR)CBO
V_(BR)CEO*
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
C_ob
f_T
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=160V,I_E=0
V_EB=5V,I_C=0
V_CE=5V, I_C=100mA
I_C=500mA,I_B=50mA
V_CE=5V, I_C=500mA
V_CB=10V,I_E=0, f=1MHz
V_CE=10V,I_C=100mA,
Min Typ Max Unit
160
V
160
V
5
V
1
μA
1
μA
70
240
1.5
V
1
V
25
pF
100
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
O
70-140
Y
120-240
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1
D,Nov,2014