2SC2883 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC2883 TRANSISTOR (NPN)
FEATURES
Low voltage
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
30
V
30
V
5
V
1.5
A
0.5
W
150
℃
-55~150
℃
SOT-89-3L
1. BASE
2. COLLECTOR ₁
3. EMITTER
2
3
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=1mA,I_E=0
V_(BR)CEO I_C=10mA,I_B=0
V_(BR)EBO I_E=1mA,I_C=0
I_CBO
V_CB=30V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=2V,I_C=0.5A
V_CE(sat) I_C=1.5A,I_B=30mA
V_BE
V_CE=2V,I_C=0.5A
f_T
V_CE=2V,I_C=500mA
C_ob
V_CB=10V,I_E=0,f=1MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
O
100-200
GO
Min Typ
30
30
5
100
120
Max Unit
V
V
V
0.1
μA
0.1
μA
320
2
V
1
V
MHz
40
pF
Y
160-320
GY
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1
C,Oct,2015