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| 2SC2878A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – For Muting and Switching Applications | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2878A TRANSISTOR (NPN)
TO-92
FEATURES
z High Emitter-Base Voltage
z Low On Resistance
1. EMITTER
2. COLLECTOR
3. BASE
123
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
50
V
20
V
15
V
0.3
A
0.4
W
150
â
-55-+150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
15
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=15V,IC=0
0.1
μA
DC current gain
hFE
VCE=2V,IC=4mA
200
1200
Collector-emitter saturation voltage
VCE(sat) IC=30mA,IB=3mA
0.3
V
Base-emitter voltage
VBE(on) VCE=2V,IC=4mA
0.71
V
Transition frequency
fT
VCE=6V,IC=4mA
30
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
7
pF
Turn-on time
ton
160
ns
Storage time
tS
VCC=12V,IC=12mA,IB=1.2mA
500
ns
Fall time
tf
130 ns
CLASSIFIC ATION of hFE
Rank
Range
A
200-700
B
350-1200
www.cj-elec.com
1
D,Mar,2016
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