2SC2873 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC2873 TRANSISTOR (NPN)
SOT- 89-3L
FEATURES
 Small Flat Package
 High Speed Switching Time
 Low Collector-emitter saturation voltage
 Complementary to 2SA1213
APPLICATIONS
 Power Amplifier and Switching
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=1A,IB=50mA
IC=1A,IB=50mA
VCE=2V,IC=0.5A
VCB=10V, IE=0, f=1MHz
Min Typ
50
50
5
70
20
120
30
Max
0.1
0.1
240
0.5
1.2
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF h_FE(1)
RANK
O
RANGE
70–140
MARKING
MO
Y
120–240
MY
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1
D,Oct,2015