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| 2SC2839 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – HF Amp Applications | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SC2839 TRANSISTOR (NPN)
FEATURES
High fT and small Cre
TO-92S
1. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current âContinuous
30
mA
PC
Collector Power Dissipation
400
mW
TJ
Junction Temperature
125
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless
otherwise
2. COLLECTOR
3. BASE
12 3
specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=100μA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA, IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=10V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=4V, IC=0
0.1
μA
DC current gain
hFE
VCE=6V, IC=1mA
60
320
Transition frequency
fT
VCE=6V, IC=1mA
200 320
MHz
Reverse Transfer Capacitance
Cre
VCB=6V, f=1MHz
0.7 0.95 1.3
pF
Base-to-Collector Time Constant
rbbâcC VCE=6V, Ic=1mA,,f=31.9MHZ
12
20
ps
Noise figure
NF
VCE=6V, Ic=1mA,,f=100MHZ
3.0
dB
Power Gain
PG
VCE=6V, Ic=1mA,,f=100MHZ
25
dB
CLASSIFICATION OF hFE
Rank
Range
D
60-120
E
100-200
F
160-320
www.cj-elec.com
1
DA,Juln,2,2001164
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