2SC2715 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-23 Plastic-Encapsulate Transistors
2SC2715 TRANSISTOR (NPN)
FEATURES
z High Power Gain
z Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to
Ambient
Junction Temperature
Storage Temperature
Value
35
30
4
50
350
357
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=10μA, I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=35V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE(1) V_CE=12V, I_C=2mA
Collector-emitter saturation voltage
V_CE(sat) I_C=10mA, I_B=1mA
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
V_BE(sat)
C_ob
f_T
I_C=10mA, I_B=1mA
V_CB=10V, I_E=0, f=1MHz
V_CE=10V, I_C=1mA
Power Gain
Gpe V_CE=6V, I_C=1mA, f=10.7MHz
CLASSIFIC ATION OF h _FE(1)
Rank
Range
Marking
R
40-80
RR1
O
70-140
RO1
www.cj-elec.com
1
Min Typ
Max Unit
35
V
30
V
4
V
0.1 μA
0.1 μA
40
240
0.4
V
1
V
3.2
pF
100
400 MHz
27
33
dB
Y
120-240
RY1
CA,JSuenp,,22001144