2SC2714 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC2714 TRANSISTOR (NPN)
FEATURES
z Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to
Ambient
Junction Temperature
Storage Temperature
Value
40
30
4
20
100
1000
125
-55~+125
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer capacitance
Noise figure
Symbol Test conditions
V_(BR)CBO I_C=10μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=10μA,I_C=0
I_CBO
V_CB=18V,I_E=0
I_EBO
V_EB=4V,I_C=0
h_FE
V_CE=6V,I_C=1mA
f_T
V_CE=6V,I_C=1mA
C_re
V_CB=6V,I_E=0,f=1MHz
NF
V_CE=6V,I_c=1mA,f=100MHZ
Min Typ
40
30
4
40
550
0.7
2.5
Max Unit
V
V
V
0.5
μA
0.5
μA
200
MHz
pF
5
dB
CLASSIFICATION OF h_FE
Rank
Range
Marking
R
40-80
QR
O
70-140
QO
Y
100-200
QY
www.cj-elec.com
1
BA,SJuenp,,22001144