2SC2712 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-23 Plastic-Encapsulate Transistors}
2SC2712 TRANSISTOR (NPN)
FEATURE
· Audio Frequency General Purpose Amplifier Applications
· Low Noise: NF=1 dB (Typ),10dB(MAX)
· Complementary to 2SA1162
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
150
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C= 100μA, I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA ,I_B=0
50
Emitter-base breakdown voltage
V_(BR)EBO I_E= 100μA, I_C=0
5
Collector cut-off current
I_CBO
V_CB= 60 V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
h_FE
V_CE=6V, I_C=2mA
70
Collector-emitter saturation voltage
V_CE(sat) I_C= 100mA, I_B=10mA
0.1
Transition frequency
f_T
V_CE=10V, I_C= 1mA
80
Output capacitance
Noise Figure
CLASSIFICATION OF h_FE
Rank
O
Range
70-140
Marking
LO
C_ob
V_CB=10V, I_E=0,f=1 MHz
2.0
V_CE=6V,I_C=0.1mA,f=1kHz,
NF
1.0
Rg=10kΩ
Y
120-240
LY
GR
200-400
LG
Max
0.1
0.1
700
0.25
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
10
dB
BL
350-700
LL
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