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| 2SC2703 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
2SC2703 TRANSISTOR (NPN)
TO-92L
FEATURES
High DC Current Gain: hFE=100-320
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
Unit
30
V
30
V
5
V
1
A
0.75
W
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=1mA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC=10mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO IE=1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
µA
DC current gain
hFE(1)
hFE(2)
VCE=2V,IC=100mA
VCE=2V,IC=800mA
100
320
40
Collector-emitter saturation voltage
VCE(sat) IC=800mA,IB=80mA
0.5
V
Base-emitter voltage
VBE
VCE=2V,IC=800mA
1.5
V
Transition frequency
fT
VCE=2V,IC=100mA
150
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
13
pF
CLASSIFICATION OF hFE(1)
Rank
Range
O
100-200
Y
160-320
www.cj-elec.com
1
AD,,JMuna,r2,2001146
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