2SC2668 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SC2668 TRANSISTOR (NPN)
TO-92S
1. EMITTER
FEATURES
z Small Reverse Transfer Capacitance
z Low Noise Figure
2. COLLECTOR
3. BASE
12 ₃
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
200
150
-55-150
Unit
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Reverse Transfer Capacitance
Collector-Base Time Constant
Transition frequency
Power Gain
Noise figure
Symbol
Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
I_C =100μA, I_E=0
I_C =1mA, I_B=0
I_E=100μA, I_C=0
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=6V, I_C=1mA
C_re
V_CE=6V, f=1MHz
Cc·rbb’ V_CE=6V, I_E=-1mA, f=30MHz
f_T
V_CE=6V, I_C=1mA
Gpe V_CC=6V, I_C =1mA, f=100MHz
NF V_CC=6V, I_C =1mA, f=100MHz
Min Typ Max
40
30
4
0.5
0.5
40
200
0.7
30
550
18
5
Unit
V
V
V
μA
μA
pF
ps
MHz
dB
dB
CLASSIFICATION OF h_FE
Rank
Range
R
40-80
O
70-140
Y
100-200
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DA,Junl,2,2001164