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| 2SC2551 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGHT VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2551 TRANSISTOR (NPN)
FEATURES
z High voltage
z Low saturation voltage
z Small collector output capacitance
z Complementary to 2SA1091
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
300
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
6
V
IC
Collector Current -Continuous
100
mA
PC
Collector power dissipation
400
mW
Tj
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO Ic=100uA, IE=0
300
V
Collector-emitter breakdown voltage
V(BR)CEO Ic=1mA, IB=0
300
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=300V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
0.1
μA
DC current gain
hFE(1)
hFE(2)
VCE=10V, IC=20mA
VCE=10V, IC=1mA
30
150
20
Collector-emitter saturation voltage
VCE(sat) IC=20mA, IB=2mA
0.5
V
Base-emitter saturation voltage
VBE(sat) IC=20mA, IB=2mA
1.2
V
Transition frequency
fT
VCE=10V, IC=20mA
80
MHz
Collector output capacitance
Cob
VCB=20V,IE=0,f=1MHz
4
pF
CLASSIFICATION OF hFE(1)
Rank
Range
R
30-90
O
50-150
www.cj-elec.com
1
C,Dec,2015
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