2SC2482 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH VOLTAGE SWITCHING AND, COLOR TV HORIZ. DRIVER, CHROMA OUTPUT APPLICATIONS)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SC2482 TRANSISTOR (NPN)
FEATURE
z High Voltage :VCEO=300V
z Small Collector Output Capacitance: Cob=3.0pF(Typ)
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
I_C
Emitter-Base Voltage
Collector Current -Continuous
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
Value
Unit
300
V
300
V
7
V
0.1
A
0.9
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)_CBO
V(BR)_CEO
V(BR)_EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
f_T
Cob
Test conditions
I_C= 100μA, I_E=0
I_C= 3mA ,I_B=0
I_E= 100μA,I_C=0
V_CB= 240 V, I_E=0
V_CB= 220 V, I_B=0
V_EB= 7V, I_C=0
V_CE=10V, I_C=20mA
I_C= 10mA, I_B=1mA
I_C=10mA, I_B=1mA
V_CE=10V, I_C=20mA,f=30MHz
V_CB=20V, I_E=0, f=1MHz
Min Typ
300
300
7
30
50
3
Max Unit
V
V
V
1.0
μA
5.0
μA
1.0
μA
150
1.0
V
1.0
V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
O
30-90
Y
90-150
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AC,,JMuna,r2,2001146