2SC2411 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC2411 TRANSISTOR(NPN)
SOT-23
FEATURES
z High ICMax.ICMax. = 0.5mA
z Low VCE(sat).Optimal for low voltage operation.
z Complements the 2SA1036
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
40
V
V_CEO
Collector-Emitter Voltage
32
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current
500
mA
P_C
Collector Power Dissipation
200
mW
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA,I_E=0
40
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA,I_B=0
32
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA,I_C=0
5
Collector cut-off current
I_CBO
V_CB=20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=4V,I_C=0
DC current gain
h_FE
V_CE=3V,I_C=100mA
82
Collector-emitter saturation voltage
V_CE(sat) I_C=500mA,I_B=50mA
Transition frequency
f_T
V_CE=5V,I_C=20mA,f=100MHz
Collector output capacitance
C_ob
V_CB=10V,I_E=0,f=1MHz
Typ
250
6.0
Max Unit
V
V
V
1
μA
1
μA
390
0.4 V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
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