2SC2389S Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92S Plastic-Encapsulate Transistors

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S Plastic-Encapsulate Transistors
2SC2839S TRANSISTOR (NPN)
FEATURES
High f_T and small C_re
TO-92S
1. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol Para
meter
Value
Unit
V_CBO
Collector-Base Voltage
30
V
V_CEO
Collector-Emitter Voltage
20
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current –Continuous
30
mA
P_C
Collector Power Dissipation
400
mW
T_J
Junction Temperature
125
℃
T_stg
Storage Temperature
-55-150
℃
ELECTRICAL CHARA CTERISTICS (Ta=25℃ unless other
2. COLLECTOR
3. BASE
12 ₃
wise s pecified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V_(BR)CBO I_C=100μA, I_E=0
30
V
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA, I_B=0
20
V
Emitter-base breakdown voltage
V_(BR)EBO I_E=100μA, I_C=0
5
V
Collector cut-off current
I_CBO
V_CB=10V, I_E=0
0.1
μA
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
0.1
μA
DC current gain
h_FE
V_CE=6V, I_C=1mA
60
320
Transition frequency
f_T
V_CE=6V, I_C=1mA
200 320
MHz
Reverse Transfer Capacitance
C_re
V_CB=6V, f=1MHz
0.7 0.95 1.3
pF
Base-to-Collector Time Constant
rbb’c_C V_CE=6V, I_c=1mA,,f=31.9MH_Z
12
20
ps
Noise figure
NF
V_CE=6V, I_c=1mA,,f=100MH_Z
3.0
dB
Power Gain
P_G
V_CE=6V, I_c=1mA,,f=100MH_Z
25
dB
CLASSIFIC ATION OF h _FE
Rank D
Range
60-120
E
100-200
F
160-320
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DA,Junl,2,2001164