2SC2235 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC2235 TRANSISTOR (NPN)
FEATURES
Complementary to 2SA965
MAXIMUM RATINGS ( Taa=25℃ unless otherwise noted)
Symbol
VB_CBOB
VB_CEOB
VB_EBOB
I_CB
B
P_CB
B
T_JB
B
T_sB _tgB
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Unit
120
V
120
V
5
V
0.8
A
0.9
W
150
℃
-55to+150
℃
TO-92MOD
1. EMITTER
2. COLLECTER
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V = I =1mA,I ₍B _BR)CBOB
C^B
B
E^B
B
0
V₍B _BR)CEO= B IB_C=B 10mA,IB_BB 0
V = I =1mA,I B_(BR)EBOB
E^B
B
C^B
B
05
IB_CBOB = VB_CB=B 120V,IB_EB 0
I= V =5V,I 0 _EB _BOB
EB ^B
B
C^B
B
h_FE B
B
= VB_CE=B 5V,IB_CB 100mA
V_CB _EB(sat) IB_C= =B 500mA,I_BB B 50mA
V_BE B
B
IB_C=B = 500mA, V_CB _EB 5V
f_TB
B
Cob
= VB_CE=B 5V, IB_CB 100mA
VB_CB=10V,
I =0 _EB
B
f=1MHz
120
120
80
120
Max Unit
V
V
V
0.1
μA
0.1
μA
240
1.0
V
1.0
V
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
O
80-160
Y
120-240
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