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| 2SC2230A Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT Process) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
2SC2230A TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage
z High DC Current Gain
TO â 92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
200
180
5
0.1
800
156
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=10µA,IC=0
VCB=200V,IE=0
VEB=5V,IC=0
VCE=10V, IC=10mA
VCE=10V, IC=50mA
IC=50mA,IB=5mA
VCE=10V, IC=1mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=10mA
Min Typ Max Unit
200
V
180
V
5
V
0.1
μA
0.1
μA
120
400
80
0.5
V
0.5
0.7
V
7
pF
50
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
Y
120-240
GR
200-400
www.cj-elec.com
1
AC,J,Muna,r2,2001146
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