2SC2216 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2216 TRANSISTOR (NPN)
FEATURES
Amplifier Dissipation NPN Silicon
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
V_CEO
VEBO
I_C
PC
TJ
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
50
45
4
50
300
125
-55-125
Units
V
V
V
mA
mW
℃
℃
TO-92
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Bass-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO IC= 100μA, IE=0
50
V(BR)CEO IC= 10 mA , IB=0
45
V(BR)EBO IE= 100μA, IC=0
4
ICBO
VCB=50 V IE=0
IEBO
VEB= 3 V, IC=0
hFE
VCE=12.5V, IC=12.5 mA
40
VCE (sat)
IC= 15mA, IB=1.5 mA
VBE (sat)
IC= 15mA, IB=1.5 mA
fT
VCE=12.5 V, IC=12.5mA 300
Cob
V_CB=10V,I_E=0,
f=30MHz
Max
0.1
0.1
140
0.2
1.5
2.0
Unit
V
V
V
μA
μA
V
V
MHz
pF
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1
C,Dec,2015