2SC2130 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TO-92 Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2130 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
45
40
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE
C_ob
f_T
Test conditions
I_C= 0.1mA,I_E=0
I_C=10mA,I_B=0
I_E=0.1mA,I_C=0
V_CB=35V,I_E=0
V_CE=25V,I_B=0
V_EB=5V,I_C=0
V_CE=1V, I_C=100mA
I_C=500mA,I_B=20mA
V_CE=1V, I_C=10mA
V_CB=10V,I_E=0, f=1MHz
VCE=5V,IC=10mA
Min Typ Max Unit
45
V
40
V
5
V
0.1
μA
0.1
μA
0.1
μA
100
320
0.5
V
0.8
V
13
pF
100
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
O
100-200
Y
160-320
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