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| 2SC1959 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
2SC1959 TRANSISTOR (NPN)
FEATURES
z Excellent hFE Linearity
z High Transition Frequency
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
0.5
500
250
150
-55~+150
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 3
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=35V,IE=0
VEB=5V,IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=100mA,IB=10mA
VCE=1V, IC=100mA
VCB=6V,IE=0, f=1MHz
VCE=6V,IC=20mA
Min Typ Max Unit
35
V
30
V
5
V
0.1
μA
0.1
μA
70
400
25
0.25
V
1
V
7
pF
300
MHz
CLASSIFICATION OF hFE
RANK
RANGE
hFE(1)
hFE(2)
O
70-140
25Min
Y
120-240
40Min
GR
200-400
www.cj-elec.com
1
DA,Junl,2,2001164
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