 English |
|
|
|
|
|
|
|
| 2SC1741S Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (32V, 0.5A) | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92S Plastic-Encapsulate Transistors
2SC1741S TRANSISTOR (NPN)
FEATURES
z High IC
z Low VCE(sat). Optimal for Low Voltage Operation
z Complements the 2SA854S
TO â 92S
1. EMITTER
2. COLLECTOR
3. BASE
12 3
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
32
5
0.5
200
625
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= 0.1mA,IE=0
40
V
V(BR)CEO IC=1mA,IB=0
32
V
V(BR)EBO IE=0.1mA,IC=0
5
V
ICBO
VCB=20V,IE=0
1
μA
IEBO
VEB=4V,IC=0
1
μA
hFE
VCE=3V, IC=100mA
120
560
VCE(sat) IC=500mA,IB=50mA
0.4 V
Cob
VCB=10V,IE=0, f=1MHz
6
pF
fT
VCE=5V,IC=20mA, f=100MHz
250
MHz
CLASSIFICATION OF hFE
RANK
Q
RANGE
120-270
R
180-390
S
270-560
wwwww.wcj.-cej-lecle.co.cmom
1
AJDu,nJu,0l,42016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese