2SC1675 Datasheet, PDF (1/3 Pages) Micro Electronics – NPN SILICON TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC1675 TRANSISTOR (NPN)
FEATURES
z Low Collector Current
z General Purpose Switching and Amplification
TO – 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
30
5
50
625
200
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
C_ob
f_T
Test conditions
I_C= 10µA,I_E=0
I_C=5mA,I_B=0
I_E=10µA,I_C=0
V_CB=50V,I_E=0
V_EB=5V,I_C=0
V_CE=6V, I_C=1mA
I_C=10mA,I_B=1mA
V_CE=6V, I_C=1mA
V_CB=6V,I_E=0, f=1MHz
VCE=6V,IC=1mA
Min Typ Max Unit
50
V
30
V
5
V
100
nA
100
nA
40
240
0.3
V
0.75
V
2.5
pF
150
MHz
CLASSIFICATION OF h_FE
RANK
R
RANGE
40-80
O
70-140
Y
120-240
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1
C,Dec,2015