2SC1627A Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (ERIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS)

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC1627A TRANSISTOR (NPN)
FEATURE
z Complementary to 2SA817A
z Driver Stage Application of 30 to 35 Watts Amplifiers
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Power Dissipation
T_j
Junction Temperature
T_stg
Storage Temperature Range
Value Unit
80
V
80
V
5
V
0.4
A
0.8
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_BE(on)
f_T
Test conditions
I_C=100μA , I_E=0
I_C=5mA, IB=0
I_E=100μA, I_C=0
V_CB=50V, IE=0
V_EB=5V, IC=0
V_CE=2 V, IC= 50mA
V_CE=2 V, IC= 200mA
I_C= 200m A, I_B= 20mA
V_CE= 2V, IC= 5mA
V_CE= 10 V, I_C= 10mA
Min
80
80
5
70
40
0.55
Typ
100
Max Unit
V
V
V
0.1
μA
0.1
μA
240
0.4
V
0.8
V
MHz
CLASSIFICATION OF h_{FE (1)}
Rank
Range
O
70-140
Y
120-240
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AD,,JMuna,r2,2001146