2SC1623 Datasheet, PDF (1/4 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SC1623 TRANSISTOR (NPN)
SOT-23
FEATURES
z High DC current gain :h_FE=200(Typ) V_CE=6V,I_C=1mA
z High voltage:V_CEO=50V
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC
Collector Current
100
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF h_FE
Rank
L4
V_(BR)CBO I_C=100μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=100μA,I_C=0
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=6V,I_C=1mA
V_CE(sat) I_C=100mA,I_B=10mA
V_BE(sat) I_C=100mA,I_B=10mA
f_T
V_CE=6V,I_C=10mA
L5
Range
90-180
135-270
Marking
L4
L5
Min Typ Max Unit
60
V
50
V
5
V
0.1 μA
0.1 μA
90 200 600
0.3 V
1
V
250
MHz
L6
200-400
L6
L7
300-600
L7
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CA,JOucnt,2014