2SC1583 Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – 2SC1583

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate Transistors
2SC1583 DUAL TRANSISTOR (NPN+NPN)
FEATURE
 Excellent Linearity of DC Gain
 Low Noise 　
 High h_FE
APPLICATION
 Differential Amplifier Circuit
 Pre-amplification Circuit
 Noise Suppression Circuit
 Voice Control Circuit
SOT-23-6L
MARKING
Equivalent Circuit
PIN1
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_ΘJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Value
50
50
5
0.1
0.35
357
150
-55～+150
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage differential
DC current gain ratio
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
|V_BE1-V_BE2|
h_FE1/h_FE2*
f_T
C_ob
Noise figure
NF
* The lower h_FE of two components as h_FE1.
Test condition
I_C=10µA, I_E=0
I_C=100µA, I_B=0
I_E=10µA, I_C=0
V_CB=35V, I_E=0
V_CE=35V, I_B=0
V_EB=2V, I_C=0
V_CE=2V, I_C=1mA
I_C=10mA, I_B=1mA
V_CE=6V,I_C=1mA
V_CE=6V,I_C=1mA
V_CE=6V,I_C=1mA
V_CB=6V, I_E=0, f=1MHz
V_CE=6V, I_E=-0.1mA,
f=1kHz, R_G=10 kΩ
Min
Typ
50
50
5
250
0.8
150
2.5
0.5
www.cj-elec.com
1
Unit
V
V
V
A
W
℃/W
℃
℃
Max Unit
V
V
V
0.1
µA
10
µA
0.1
µA
600
0.6
V
10
mV
1
MHz
pF
dB
C,May,2015