2SC1162 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SC1162 TRANSISTOR (NPN)
FEATURES
Low Frequency Power Amplifier
TO-126
1. EMITTER
2. COLLECOTR
3. BASE
0$5.,1*
C1162
z_XXX
C1162 'HYLFH FoGH
Solid dot = Green molding compound
device, if none, the normal device
;;; &ode
Equivalent Circuit
ORDERING INFORMATION
Part Number
2SC1162
2SC1162-TU
Package
TO-126
TO-126
Packing Method
Bulk
Tube
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO Collector-Emitter Voltage
V_CEO Collector-Emitter Voltage
V_EBO Emitter-Base Voltage
I_C
Collector Current -Continuous
Pc Collector Power Dissipation
T_J Junction Temperature
T_stg Storage Temperature
Value
Unit
35
V
35
V
5
V
2.5
A
1
W
150
℃
-55-150
℃
Pack Quantity
200pcs/Bag
60pcs/Tube
www.cj-elec.com
1
D,Aug,2017