2SB946 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planar type(For power switching)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SB946 TRANSISTOR (PNP)
FEATURES
z Low Collector to Emitter Saturation Voltage V_CE(sat)
z Satisfactory Linearity of Forward Current Transfer Ratio h_FE
z Large Collector Current I_C
TO-220F
1.BASE
2.COLLECTOR
3.EMITTER
1₂₃
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-130
-80
-7
-7
2
62.5
150
-55~+150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_CE(sat)
V_{BE (sat)}
f_T
Test conditions
I_C=-100uA,I_E=0
I_C=-10mA,I_B=0
I_E=-100uA,I_C=0
V_CB=-100V,I_E=0
V_EB=-5V,I_C=0
V_CE=-2V, I_C=-0.1A
V_CE=-2V, I_C=-3A
I_C=-5A,I_B=-250mA
I_C=-5A,I_B=-250mA
V_CE=-10V,I_C=-0.5A，f=10MHz
Min Typ Max Unit
-130
V
-80
V
-7
V
-10 uA
-50 uA
45
60
260
-0.5
V
-1.5
V
30
MHz
CLASSIFICATION OF h_FE(2)
RANK
R
RANGE
60-120
Q
90-180
P
130-260
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1
C,May,2016