 English |
|
|
|
|
|
|
|
| 2SB927 Datasheet, PDF (1/3 Pages) Sanyo Semicon Device – Large-Current Driving Applications | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92MOD Plastic-Encapsulate Transistors
2SB927 TRANSISTOR (PNP)
TO â 92M
TO â 92MOD
1. COLLECTOR
FEATURES
z Low Saturation Voltage
z Large Current Capacity and Wide ASO
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
APPLICATIONS
z Power Supplies
z Relay Drivers
z Lamp Drivers
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-25
-6
-2.5
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-100µA,IE=0
-30
V
V(BR)CEO IC=-1mA,IB=0
-25
V
V(BR)EBO IE=-100µA,IC=0
-6
V
ICBO
VCB=-20V,IE=0
-0.1
μA
IEBO
VEB=-4V,IC=0
-0.1
μA
hFE(1)
VCE=-2V, IC=-0.1A
100
560
hFE(2)
VCE=-2V, IC=-1.5A
65
VCE(sat) IC=-1.5A,IB=-75mA
-0.6
V
VBE (sat) IC=-1.5A,IB=-75mA
-1.2
V
Cob
VCB=-10V,IE=0, f=1MHz
32
pF
fT
VCE=-10V,IC=-50mA
150
MHz
CLASSIFICATION OF hFE(1)
RANK
R
RANGE
100-200
S
140-280
T
200-400
U
280-560
www.cj-elec.com
1
C,Mar,2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese