2SB892 Datasheet, PDF (1/4 Pages) Sanyo Semicon Device – Large-Current Switching Applications

JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SB892 TRANSISTOR (PNP)
FEATURE
z Power Supplies, Relay Drivers, Lamp Drivers,
and Automotive Wiring
z Low Saturation Voltage.
z Large Current Capacity and Wide ASO.
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
Collector Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
Value
-60
-50
-6
-2
0.75
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)_CBO I_C= -100μA , I_E=0
-60
Collector-emitter breakdown voltage
V(BR)_CEO I_C= -1mA , I_B=0
-50
Emitter-base breakdown voltage
V(BR)_EBO I_E=- 100μA, I_C=0
-6
Collector cut-off current
I_CBO
V_CB= -50V , I_E=0
Emitter cut-off current
I_EBO
V_EB= -4V , I_C=0
DC current gain
h_FE(1)
V_CE=-2V, I_C= -100mA
100
h_FE(2)
V_CE=-2V, I_C= -1.5A
40
Collector-emitter saturation voltage
V_CE(sat)
I_C= -1A, I_B= -50mA
Base-emitter saturation voltage
V_BE(sat)
I_C= -1A, I_B= -50mA
Transition frequency
f_T
V_CE= -10 V, I_C= -50mA
150
CLASSIFICATION OF h_FE(1)
Rank
R
Range
100-200
S
140-280
T
200-400
Unit
V
V
V
A
W
℃
℃
Max
-0.1
-0.1
560
-0.4
-1.2
Unit
V
V
V
μA
μA
V
V
MHz
U
280-560
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AD,J,Muna,r2,2001146