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| 2SB857 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon PNP Triple Diffused | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SB857 TRANSISTOR (PNP)
FEATURES
z Low Frequency Power Amplifier
TO-220-3L
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-70
-50
-5
-4
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO*
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
IEBO
hFE(1) *
hFE(2) *
VCE(sat) *
VBE*
fT*
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Test conditions
IC=-10μA,IE=0
IC=-50mA,IB=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VEB=-5V,IC=0
VCE=-4V, IC=-1A
VCE=-4V, IC=-0.1A
IC=-2A,IB=-200mA
VCE=-4V, IC=-1A
VCE=-4V,IC=-500mA
Min Typ Max Unit
-70
V
-50
V
-5
V
-1
μA
-1
μA
60
320
35
-1
V
-1
V
15
MHz
CLASSIFICATION OF hFE(1)
RANK
B
RANGE
60-120
C
100-200
D
160-320
www.cj-elec.com
1
B,Nov,2014
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