2SB834 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SB834 TRANSISTOR (PNP)
FEATURES
z Low Collector -Emitter Saturation Voltage
V_CE(sat)=1.0V(Max)_@ I_C=-3A,I_B=-0.3A
z DC current Gain
h_FE =60-200_@ I_C=0.5A
z Complementary to NPN 2SD880
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
-60
V
-60
V
-7
V
-3
A
1.5
W
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Turn-on Time
Storage Time
Turn-off Time
*Pulse test.
CLASSIFICATION OF h_FE(1)
Rank
Range
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)*
h_FE(2)*
V_CE(sat)*
V_BE*
f_T
t_on
t_stg
t_off
Test conditions
I_C=-1mA,I_E=0
I_C =-50mA,I_B=0
I_E=-1mA,I_C=0
V_CB=-60V,I_E=0
V_EB=-7V,I_C=0
V_CE=-5V,I_C=-500mA
V_CE=-5V,I_C=-3A
I_C=-3A,I_B=-0.3A
V_CE=-5V,I_C=-500mA
V_CE=-5V,I_C=-500mA, f=1MHz
V_CC=-30V,I_c=-2A,
I_B!=I_B2=-0.2A
O
60-120
Min
Typ Max
Unit
-60
V
-60
V
-7
V
-100 μA
-100 μA
60
200
20
-1
V
-1
V
9
MHz
0.4
μs
1.7
μs
0.5
μs
Y
100-200
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1
E,Nov,2014