2SB772 Datasheet, PDF (1/3 Pages) NEC – PNP SILICON POWER TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
2SB772 TRANSISTOR (PNP)
FEATURES
Low Speed Switching
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
TO-220-3L
1.BASE
2.COLLECTOR
3.EMITTER
1_{2 3}
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_Ó¨JA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-6
-3
2
62.5
150
-55-150
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEO
I_EBO
h_FE
V_CE(sat)
V_BE(sat)
Transition frequency
f_T
Test conditions
I_C=-100μA ,I_E=0
I_C= -10mA , I_B=0
I_E= -100μA,I_C=0
V_CB= -40V, I_E=0
V_CE=-30V, I_B=0
V_EB=-6V, I_C=0
V_CE= -2V, I_C= -1A
I_C=-2A, I_B= -0.2A
I_C=-2A, I_B= -0.2A
V_CE= -5V, I_C=-0.1A
f =10MHz
Min
Typ
Max
-40
-30
-6
-1
-10
-1
60
400
-0.5
-1.5
50
80
Unit
V
V
V
μA
μA
μA
V
V
MHz
CLASSIFICATION OF hFE
Rank
R
Range
60-120
O
100-200
Y
160-320
GR
200-400
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1
A,Oct,2016