2SB766A Datasheet, PDF (1/4 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB766A TRANSISTOR(PNP)
SOT-89-3L
FEATURES
z Large collector power dissipation P_C
z Complementary to 2SD874A
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)
h_FE(2)
Ic=-10μA,I_E=0
Ic=-2mA,I_B=0
I_E=-10μA,I_C=0
V_CB=-20V,I_E=0
V_EB=-4V,I_C=0
V_CE=-10V,I_C=-500mA
V_CE=-5V,I_C=-1A
V_CE(sat) I_C=-500mA,I_B=-50mA
V_BE(sat)
f_T
C_ob
I_C=-500mA,I_B=-50mA
V_CE=-10V,I_C=-50mA,f=200MHz
V_CB=-10V,I_E=0,f=1MHz
Min Typ
-60
-50
-5
85
50
-0.2
-0.85
200
20
Max Unit
V
V
V
-0.1 μA
-0.1 μA
340
-0.4
V
-1.2
V
MHz
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
MAKING
Q
85-170
BQ
R
120-240
BR
S
170-340
BS
www.cj-elec.com
1
C,Oct,2015