2SB766 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB766 TRANSISTOR (PNP)
FEATURES
z Large collector power dissipation P_C
z Complementary to 2SD874
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-25
-5
-1
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C =-10μA, I_E=0
V_(BR)CEO I_C =-2mA, I_B=0
V_(BR)EBO I_E=-10μA, I_C=0
I_CBO
V_CB=-20V, I_E=0
I_EBO
V_EB=-4V, I_C=0
h_FE(1) V_CE=-10V, I_C=-500mA
h_FE(2) V_CE=-5V, I_C=-1A
V_CE(sat) I_C=-500mA, I_B=-50mA
V_BE(sat) I_C=-500mA, I_B=-50mA
f_T
V_CE=-10V, I_C=-50mA, f=200MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
Min Typ Max Unit
-30
V
-25
V
-5
V
-0.1 μA
-0.1 μA
85
340
50
-0.2 -0.4
V
-0.85 -1.2
V
200
MHz
20
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
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1
C,Oct,2015