2SB740 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{TO-92MOD Plastic-Encapsulate Transistors}
2SB740 TRANSISTOR (PNP)
TO – 92M
TO – 92MOD
1. COLLECTOR
FEATURES
z Low Frequency Power Amplifier
z Complementary Pair with 2SD789
1. EMITTER
2. BASE
2. COLLECTOR
3. EMITTER
3. BASE
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-70
-50
-6
-1
900
139
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-10µA,I_E=0
-70
V
V_(BR)CEO I_C=-1mA,I_B=0
-50
V
V_(BR)EBO I_E=-10µA,I_C=0
-6
V
I_CBO
V_CB=-55V,I_E=0
-1
μA
I_EBO
V_EB=-6V,I_C=0
-0.2
μA
h_FE
V_CE=-2V, I_C=-100mA
100
320
V_CE(sat) I_C=-1A,I_B=-100mA
-0.6
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
35
pF
f_T
VCE=-2V,IC=-10mA
150
MHz
CLASSIFICATION OF h_FE
RANK
RANGE
B
100-200
C
160-320
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1
C,Mar,2016