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| 2SB709A Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type | |||
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JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SB709A TRANSISTOR (PNP)
SOT-23
FEATURES
z For general amplification
z Complementary to 2SD601A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-45
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current -Continuous
-100
mA
PC
Collector Power Dissipation
200
mW
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol Test conditions
Min
V(BR)CBO IC= -10 μA, IE=0
-45
V(BR)CEO IC= -2mA, IB=0
-45
V(BR)EBO IE= -10 μA, IC=0
-7
ICBO
VCB= -20 V, IE=0
ICEO
VCE= -10V, IB=0
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
hFE
VCE= -10V,IC= -2mA
160
VCE(sat) IC=-100 mA, IB= -10mA
VCE= -10V, IC= -1mA
fT
f=200MHz
60
Cob
VCB= -10V, IE= 0
f=1MHz
Max Unit
V
V
V
-0.1 μA
-100 μA
460
-0.5
V
MHz
2.7
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
160-260
BQ1
R
210-340
BR1
S
290-460
BS1
www.cj-elec.com
1
CA,JOucnt,2014
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