2SB649 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
TO-92L Plastic-Encapsulate Transistors
2SB649/2SB649A TRANSISTOR (PNP)
FEATURES
z High Collector Current
z High Collector-Emitter Breakdown Voltage
z Low Saturation Voltage
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
TO – 92L
1. EMITTER
2. COLLECTOR
3. BASE
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
2SB649
2SB649A
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-180
-120
-160
-5
-1.5
900
139
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-1mA,I_E=0
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0
2SB649
2SB649A
Emitter-base breakdown voltage
V_(BR)EBO I_E=-1mA,I_C=0
Collector cut-off current
I_CBO
V_CB=-160V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
DC current gain
h_FE(1)
h_FE(2)*
V_CE=-5V,
2SB649
I_C=-150mA
2SB649A
V_CE=-5V, I_C=-500mA
Collector-emitter saturation voltage
V_CE(sat) I_C=-500mA,I_B=-50mA
Base-emitter voltage
V_BE
V_CE=-5V, I_C=-150mA
Collector output capacitance
C_ob
V_CB=-10V,I_E=0, f=1MHz
Transition frequency
f_T
VCE=-5V,IC=-150mA
*Pulse test
CLASSIFICATION OF h_FE(1)
TYPE
2SB649
2SB649A
RANK
B
C
RANGE
60-120
100-200
Min
-180
-120
-160
-5
60
60
30
Typ Max
-10
-10
320
200
-1
-1.5
27
140
D
160-320
Unit
V
V
V
μA
μA
V
V
pF
MHz
www.cj-elec.com
1
A^D,J^,Mun^a,^r2^,20⁰1¹4⁶