2SB562 Datasheet, PDF (1/4 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SB562 TRANSISTOR (PNP)
FEATURES
z Low frequency power amplifier
z Complementary pair with 2SD468
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
Collector-Base Breakdown Voltage
-25
V_CEO
Collector-Emitter Breakdown Voltage
-20
V_EBO
Emitter-Base Breakdown Voltage
-5
I_C
Collector Current -Continuous
-1
P_C
Collector Dissipation
625
R_θJA
Thermal Resistance from Junction to Ambient
200
T_J
Junction Temperature
150
T_stg
Storage Temperature
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V_(BR)CBO I_C=-10μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10μA,I_C=0
Collector cut-off current
I_CBO
V_CB=-20V,I_E=0
Emitter cut-off current
I_EBO
V_EB=-4V,I_C=0
DC current gain
h_FE
V_CE=-2V,I_C=-0.5A
Collector-emitter saturation voltage
Base-emitter voltage
V_CE(sat) I_C=-0.8A,I_B=-0.08A
V_BE
V_CE=-2V,I_C=-0.5A
Transition frequency
f_T
V_CE=-2V,I_C=-0.5A
Collector output capacitance
C_ob
V_CB=-10V,I_E=0,f=1MHz
Unit
V
V
V
A
mW
℃/W
℃
℃
Min
Typ Max Unit
-25
V
-20
V
-5
V
-1
µA
-1
µA
85
240
-0.5 V
-1
V
350
MHz
38
pF
CLASSIFICATIONOF h_FE
Rank
Range
www.cj-elec.com
B
85-170
1
C
120-240
C,Dec,2015