2SB1694 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (-30V, -1A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SB1694 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain
z High Collector Current
z Low Collector-emitter Saturation Voltage
SOT–323
APPLICATIONS
z Low Frequency Amplifier Drive
MARKING: ES
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO Collector-Base Voltage
-30
V_CEO Collector-Emitter Voltage
-30
V_EBO Emitter-Base Voltage
-6
I_C
Collector Current
-1
P_C
Collector Power Dissipation
200
R_ΘJA Thermal Resistance From Junction To Ambient
625
T_j
Junction Temperature
T_stg
Storage Temperature
150
-55～+150
Unit
V
V
V
A
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE*
V_CE(sat)
f_T
Test conditions
I_C=-10µA, I_E=0
I_C=-1mA, I_B=0
I_E=-10µA, I_C=0
V_CB=-30V, I_E=0
V_EB=-5V, I_C=0
V_CE=-2V, I_C=-100mA
I_C=-500mA, I_B=-25mA
V_CE=-2V,I_c=-100mA, f=100MHz
Collector output capacitance
C_ob
*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.
V_CB=-10V, I_E=0, f=1MHz
Min Typ
-30
-30
-6
270
320
7
Max
-100
-100
680
-0.38
Unit
V
V
V
nA
nA
V
MHz
pF
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