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| 2SB1568 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (-80V, -4A) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SB1568 TRANSISTOR (PNP)
TO â 220F
FEATURES
ï¬ Available in TO-220 F package
ï¬ Darling connection provides high dc current gain (hFE)
ï¬ Damper diode is incorporated
ï¬ Built in resistors between base and emitter
ï¬ Power amplifler
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
1. BASE
123
2. COLLECTOR
3. EMITTER
Value
-80
-80
-7
-4
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltag
V(BR)CBO
IC=-50μA, IE=0
-80
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-80
Emitter-base breakdown voltage
V(BR)EBO
IE=-5m A,IC=0
-7
Collector cut-off current
ICBO
VCB=-80V,IE=0
Collector cut-off current
ICEO
VCE=-80V,IB=0
Emitter cut-off current
DC current gain
IEBO
hFE(1)*
hFE(2)*
VEB=-5V,IC=0
VCE=-4V, IC=-3A
VCE=-3V, IC=-2A
1000
1000
Collector-emitter saturation voltage
VCE(sat)*
IC=-2A,IB=-4mA
IC=-3A,IB=-12mA
Collector output capacitance
Cob
VCB=-10V,IE=0, f=1MHz
Transition frequency
fT
VCE=-5V,IC=-1A,
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Typ Max
-100
-100
-3
10000
10000
-1.5
-1.5
55
15
Unit
V
V
V
μA
μA
mA
V
V
pF
MHz
www.cj-elec.com
1
A-3,May,2016
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