2SB1440 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1440 TRANSISTOR (PNP)
SOT-89-3L
FEATURES
z Low collector-emitter saturation voltage V_CE(sat)
z For low-frequency output amplification
z Complementary to 2SD2185
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-2
500
150
-55~150
Unit
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base- emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h_FE1
Rank
Range
Marking
Symbol
Test conditions
V_(BR)CBO I_C=-10μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-10μA, I_C=0
I_CBO
V_CB=-50V, I_E=0
I_EBO
V_EB=-5V, I_C=0
h_FE1 V_CE=-2V, I_C=-200mA
h_FE2 V_CE=-2V, I_C=-1A
V_CE(sat) I_C=-1A, I_B=-50mA
V_BE(sat) I_C=-1A, I_B=-50mA
f_T
V_CE=-10V, I_C=50mA, f=200MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
R
120-240
1L
Min Typ Max Unit
-50
V
-50
V
-5
V
-1
μA
-1
μA
120
340
60
-0.3
V
-1..2
V
80
MHz
60
pF
S
170-340
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1
DA,,NJuonv,20154