2SB1412 Datasheet, PDF (1/2 Pages) Weitron Technology – PNP EPITAXIAL PLANAR TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
2SB1412 TRANSISTOR (PNP)
FEATURES
Power Amplifier Applications
TO-251-3L
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Base Voltage
-30
V
V_CEO
Collector-Emitter Voltage
-20
V
V_EBO
Emitter-Base Voltage
-6
V
I_C
Collector Current –Continuous
-5
A
P_C
Collector Power Dissipation
1
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-55-150
℃
1.BASE
2.COLLECTOR
3.EMITTER
ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless other wise specified)
Parameter
Symbol Test conditions
Min Typ Max
Collector-base breakdown voltage
V_(BR)CBO I_C=-50µA,I_E=0
-30
Collector-emitter breakdown voltage
V_(BR)CEO I_C=-1mA,I_B=0
-20
Emitter-base breakdown voltage
V_(BR)EBO I_E=-50µA,I_C=0
-6
Collector cut-off current
I_CBO
V_CB=-20V,I_E=0
-0.5
Emitter cut-off current
I_EBO
V_EB=-5V,I_C=0
-0.5
DC current gain
h_FE
V_CE=-2V,I_C=-500mA
82
390
Collector-emitter saturation voltage
V_CE(sat) I_C=-4A,I_B=-100mA
-1
Transition frequency
f_T
V_CE=-6V,I_C=-50mA,f=30MHz
120
Collector output capacitance
C_ob
V_CB=-20V,I_E=0,f=1MHz
60
Unit
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF h _FE
Rank
P
Range
82-180
Q
120-270
R
180-390
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1
C,Nov,2014