2SB1386 Datasheet, PDF (1/4 Pages) Rohm – Low Frequency Transistor(-20V,-5A)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1386 TRANSISTOR (PNP)
FEATURES
z Low collector saturation voltage
z Execllent current-to-gain characteristics
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
Value
Unit
-30
V
SOT-89-3L
1. BASE
2. COLLECTOR 1
2
3. EMITTER
3
V_CEO
V_EBO
I_C
I_CP*
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Pulsed Collector Current
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
*Single pulse,PW=10ms
-20
V
-6
V
-5
A
-10
A
0.5
W
150
℃
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-50μA,I_C=0
I_CBO
V_CB=-20V,I_E=0
I_EBO
V_EB=-5V,I_C=0
h_FE
V_CE=-2V,I_C=-500mA
V_CE(sat) I_C=-4A,I_B=-100mA
f_T
V_CE=-6V,I_C=-50mA,f=30MHz
C_ob
V_CB=-20V,I_E=0,f=1MHz
Min Typ
-30
-20
-6
82
120
60
Max Unit
V
V
V
-0.5
μA
-0.5
μA
390
-1
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
P
Range
82-180
Marking
BHP
Q
120-270
BHQ
R
180-390
BHR
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DA,JOucnt,20154